作者查詢 / mmonkeyboyy
作者 mmonkeyboyy 在 PTT [ Electronics ] 看板的留言(推文), 共3896則
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3F推:就是你設計了一個沒用的邏輯...請不要隨便用邪門這字08/11 12:58
1F推:這本都出到4了.....07/24 15:41
2F→:去中國找找 什麼都有07/24 15:42
20F推:BSIM407/18 13:34
21F→:或是他想做CAD吧07/18 13:34
22F→:改MOS GUI被動元件值...perl改一改就netlist就好了哩07/18 13:36
35F→:那個去看BSIM就有了 至於如何計算 UCB也有這些07/19 13:13
36F→:其實你現在最簡單的用法應該是寫一堆script存資料07/19 13:15
37F→:這樣按下去就可以先去躺一陣子再回來收資料就好了07/19 13:15
47F推:我還是完全搞不懂他要什麼orz 還有PTM model是沒有簽07/24 11:19
48F→:NDA下最好用的東西07/24 11:19
50F推:進去撈一撈就好了是吧 XD07/25 08:13
2F推:推06/07 21:59
5F推:opencore06/07 00:26
11F推:.....這位K板友你跟C板友好像講的是兩回事 orz06/04 22:31
12F→:腳位輸出...就是在I/O上要出怎樣的訊號06/04 22:32
13F→:你要先定義I/O...再用這個I/O去控制MOS 不是拿5/3.306/04 22:32
14F→:那個腳位直接過去 那個是....供電的腳位06/04 22:33
13F推:curve fitting都不容易了 orz05/15 01:18
2F推:2 decharge的問題05/08 20:29
3F→:1看情況 如果DATA都是固定....那幹嘛pre charge?05/08 20:30
4F→:pull high pull low就好了05/08 20:30
5F→:你講的比較接近sram架構05/08 20:30
6F→:如果是one time programmable那又是另一回事05/08 20:31
7F→:ref: 2005 ISSCC 512MB ROM, microsemi anti-fuse05/08 20:32
1F推:STTRAM有優勢也有劣勢 我猜還是會用來做last level05/08 11:26
2F→:cache比較有機會 至於RRAM應該還是走向SSD方向05/08 11:27
3F→:中間的MEMORY就再說了啦05/08 11:27
4F→:但中間也是最該換的是沒錯 :D05/08 11:28
6F推:STTRAM RRAM SLC FLASH etc. FGMOS 大家都哭了05/07 10:52
7F→:換個方式說吧 多讀少寫現在分為ROM 寫多讀多稱RAM05/07 10:53