作者查詢 / bluemkevin
作者 bluemkevin 在 PTT [ Electronics ] 看板的留言(推文), 共30則
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1F→:其實我覺得只要對製程端來說 DRC 有過就好05/04 19:38
4F→:BODY 到 DRAIN 之間有個 PN 接面?12/18 19:58
1F→:有簡單的電子學10/22 23:44
6F→:會變成二極體嗎?09/20 21:20
10F→:教科書上說的也不全然是錯 你要看清楚他假設的前提是什05/14 21:34
11F→:麼05/14 21:34
12F→:不過實際上 MODEL給的值也不一定有物理意義就是了05/14 21:36
2F→:secondary掛了 不是還有 primary 還是這時oxide就掛了?05/04 20:59
1F→:0.18 應該是指該製程可以製造出多小 ASIC M1 ½ Pitch03/30 07:57
2F→:1P6M 是指 "1 POLY 6 METAL"?03/30 07:57
7F→:說是 channel length 不盡然正確 而且可能會誤導人03/30 22:03
13F→:不過我研究所旁聽一門 Labview 的課 教授說 Labview 其03/26 21:45
14F→:實很 Powerful03/26 21:46
1F→:因為現行的製程多以 2D 為主 所以以 3D 的圖形來看03/24 09:04
2F→:會呈現方形的樣子 但實際上會因為製程的侷限 一些邊邊03/24 09:06
3F→:角角的地方不是那麼方 而如果以你這張 MOS 圖形來看03/24 09:06
4F→:製程上只要有機台 其實不難作03/24 09:07
7F→:我方形那邊講錯 你就忽略他或刪掉他吧03/24 13:58
8F→:我想表達的只是 因為製程上是在表面定義出閘極 汲極03/24 14:01
9F→:或源極的形狀 再作蝕刻 離子佈植 物質沉積的動作來完成03/24 14:03
10F→:MOS 的立體結構03/24 14:03
11F→:至於表面的形狀為什麼要作成方形 或許跟控制 MOS 的難03/24 14:04
12F→:易或隔離有關03/24 14:05
3F→:這本書很有名03/23 07:52