Re: [問題] 奈米科技展之主題~謝謝
※ 引述《ckyLu (So what.)》之銘言：
: ※ 引述《Geigemachen ()》之銘言：
: : 是的
: : 方向。
: : (100)是對應GaAs晶格三個座標軸的第一個座標軸上，
: : 掃描穿隧電子顯微鏡的電子往第一個座標軸上打過去
: 這部份有點小誤會，一般材料的結構表示上，(100)指的是晶面，方向會用<hkl>
: 意思是Gd2O3是磊晶成長在GaAs的(100)晶面上的
c大說得對，"in epitaxial Gd2O3 on GaAs(100)"的(100)語義必然強調
成長方向是沒錯的。我原來那樣寫會讓人忽略最重要的成長步驟，
邏輯順序上照c大按部就班來描述比較好。
Direct Observation of interface structure in epitaxial Gd2O3 on GaAs(100)
by STM
從STM的觀測方向來討論，(100)晶面的法向量<100>也應該是STM觀測的截面，
除非有人有辦法另外磨出一面卻不讓晶體脆裂。
http://en.wikipedia.org/wiki/Scanning_tunneling_microscope
文義上強調的的確是成長晶面方向，STM觀測方向只是理所當然地依循著晶面方向
而無須強調。
這篇文章的摘要：
The epitaxial growth of a Gd2O3 dielectric film on GaAs(100) has successfully
unpinned the Fermi level, and demonstrated the first GaAs metal-oxide
semiconductor field-effect transistor (MOSFET).The fundamental mechanism
responsible for the striking result mainly occurred at the Gd2O3/GaAs
interface. As motivated by the significance of this discovery, it is
essential to conduct in-depth study to obtain precise structural and
electronic information on these epitaxial films and interfaces. These
epitaxially grown films are crystalline with low number of defects and
interfacial states. Utilizing the capabilities of scanning tunneling microscopy
(STM), we have probed the epitaxial interfacial structure of Gd2O3 in
passivating GaAs. In addition, the local electronic properties with atomic
insight are also determined in our present work.
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◆ From: 118.168.168.124
※ 編輯: Geigemachen 來自: 118.168.168.124 (09/14 07:32)
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