Re: [問題] 請問一些半導體製程的問題
※ 引述《askakai (沒記憶就只是空殼)》之銘言：
: 不好意思
: 我有一些半導體製程的問題想請教大家:
: (1)Why the potential of a glow discharge used in dry etching or sputtering
: deposition is positive, relative to ground
I think it results from that the plasma in dry etching or sputtering
system is negative charged.
In this case, you need a positive potential to attract the plasma.
The plasma will be accerelated and impact the target.
: (2)When etching Si over SiO2 in a CF4 plasma, the problem of obtaining an
: adequately high Sfs does not usually exist. Why?
I can not figure out what Sfs is in the second question.
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