Re: [閒聊] 有誰知道這件專利案件是哪家事務所辦的 …
※ 引述《MasonT (MasonT)》之銘言：
: 標題: [閒聊] 有誰知道這件專利案件是哪家事務所辦的嗎???
: 時間: Thu Jul 17 23:54:44 2008
: 這兩天上課時拿到的資料,
: United States Patent 5,567,638
: Lin, et al. October 22, 1996
: 交大雷添福教授實驗室的成果, 由國科會出前申請,
: Method for suppressing boron penetration in PMOS
: with nitridized polysilicon gate
: 結果唯一的獨立項變成
: 4) removing a layer of nitridized silicon which is generated by said
: nitridizing step 3) on said at least one first polysilicon layer;
: 多了一個 4) removing a layer of nitridized silicon ... 結果這項專利自己把
: 最重要的步驟拿掉了, 所揭露的技術直接成為全人類共同擁有的技術.
: 有人知道這件案子的台灣事務所是哪一間?
: 是美國代理人那邊惡作劇? 還是台灣的事務所的問題?
: → MasonT:這是呂學士教授上課的資料,原來是呂學士教授不懂技術... 07/18 10:08
: → MasonT:最好樓上兩位比呂學士還要懂啦, 呵呵... 07/18 10:09
: → MasonT:我沒嗆聲,只是根據上面兩位所言,推論呂學士不懂技術..:p 07/18 10:30
: → pasica:M兄是否要詳讀此篇美國專利以及台灣專利的實施例後，再提出 07/18 10:40
: → pasica:而且如果M兄認為removing是錯的，是否可基於技術角度討論? 07/18 10:52
讀書讀久了，養成了考據的壞習慣。
專利文字方面：
本項專利文字敘述可以從http://www.freepatentsonline.com/5567638.html
查到。
在summary of the invention 中：
Between step3) and 4), a step of removing a layer of nitridized
silicon which is generated by the nitridizing step 3) on the
at least one first polysilicon layer with diluted HF
is further included.
本項專利的根據論文：
YH Lin, CS Lai, CL Lee, TF Lei and TS Chao,
"Nitridization of the Stacked Poly-Si Gate to Suppress the Boron
Peneration in pMOS",
IEEE Trans on Electron Devices, Vol 43, No 7, July, 1996
其中II.Experimental:
.....a low pressure (120 mTorr) nitridation in NH3 at
900 “C for 80 min was performed between poly I and poly
I1 for the sample “PHPP’ or between poly I1 and poly I11 for
the sample “PPHP’. The nitridized silicon films were soaked
in diluted HF (HF/H2O = 1/50) before the following poly-Si
layer deposition.
.......
技術方面：
1. HF(concentrated or diluted) 可蝕刻 LPCVD nitride。
2. 本論文之nitridize polysilicon指的應該是nitrogen-rich的polysilicon
而LPCVD nitride步驟是用以提高其下polysilicon 的nitrogen含量。
且 LPCVD nitride為絕緣體，若存在此層而未移除，上層polysilicon與下層
polysilicon間無導通，電晶體應該無法作用（個人猜測）
3. 另
a） T. Kuroi, S. Kusunoki, M Shirahata, Y Okumura, M Kobayashi,
M Inuishi and N Tsuouchi, "The effects of nitrogen implantation into
P+ poly-silicon gate on gate oxide properties", Symp on VLSI Technology,
1994
b) TS Chao, MC Liaw, CH Chu, CY Chang, CH Chien, CP Hao and TF Lei,
"Mechanism of nitrogen coimplant for supressing boron peneration
in p+-polycrystalline silicon gate of p metal-oxide semiconductor
field effect transistor", Appl Phys Lett, 69(12), September 1996
這兩篇論文都是以離子佈值方式提高nitrogen原子在boron-doped poly-Si
gate的濃度，進而達到抑制boron diffusion的效果。
與本篇以LPCVD nitride sacrificial layer方式有異曲同工之處。
所以我認為該專利並沒有寫錯。
歡迎討論。
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討論串 (同標題文章)
以下文章回應了本文：
完整討論串 (本文為第 2 之 3 篇)：