[理工] [電子]半導體物理
Under thermal equilibrium,which of the following approache(s) can create a
built-in electric field in a semiconductor?
(A) p-n juction
(B) spatial variation of doping concentration
(C) hetrojuction
(D) schottjy contacts
(E) n-type GaAs
(F) intrinsic Si
我看到有(A)(B)(C)(D)和(A)
哪個對呢 ?
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02/04 17:30, , 1F
02/04 17:30, 1F
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02/04 20:44, , 2F
02/04 20:44, 2F
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