[題目] 找concentration of electrons and holes
[領域] 半導體物理
[來源] 課本習題
[題目] An unknown semiconductor has E_g =1.1eV and N_c=N_v,It is doped with
10^15(cm^-3) donors where the donor level is 0.2eV below E_c.
Given the E_F is 0.25eV below E_c,calculate n_i and the concentration
of electrons and holes in the semiconductor at 300K.
[瓶頸] 主要是我不了解當N_c=N_v時會有什麼特別性質出現
我想利用concentration of electrons的公式
n_0=N_c*exp[-(E_c-E_F)/KT]
concentration of holes的公式
p_0=N_v*exp[-(E_F-E_v)/KT]
和 n_i=(n_0*p_0)^1/2 來解這題
但又不確定如何代公式 故希望各位高手能夠賜教 謝謝！！
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