[廢文] 趕初稿

看板NTUT_ME495A作者 (牛肉麵)時間12年前 (2011/11/29 22:05), 編輯推噓0(000)
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Excimer laser crystallization of a-Si films has been studied actively for the past few years because of its low thermal budget promise. It was demonstrated that poly-Si TFT performance could be improved dramatically through laser crystallization. The improved dramatically through laser crystallization. The improved performance was a result of lateral poly- Si grain growth during near complete melting of a-Si films. Conventionally , laser crystallization is performed on a continuous a-Si film, and prehe- ating during crystallization is usually used to further improve the TFT performance. -- ※ 發信站: 批踢踢實業坊(ptt.cc) ◆ From: 140.124.31.121
文章代碼(AID): #1ErEQxmY (NTUT_ME495A)