[試題] 99下 顧孟愷 數位電子學 期中考
課程名稱︰數位電子學
課程性質︰系必修
課程教師︰顧孟愷
開課學院：電機資訊學院
開課系所︰資訊工程學系
考試日期（年月日）︰2011/04/25
考試時限（分鐘）：140
是否需發放獎勵金：是
（如未明確表示，則不予發放）
試題 :
Instructor: Mong-Kai Ku
4/25/2011
Grading: Total 100 points
1.(20%) Use voltage and current division to find V1, V2, I2, I3 in the circuit
in Fig.1 if V = 18V, R1 = 56kΩ, R2 = 33kΩ, and R3 = 11kΩ.
＋ V1 －
┌────﹌﹌﹌────●───────┐
│ │ │
│ ↓I2 ＋ ↓I3
┌─┴─┐ │ │
│ ＋ │ │ │
│ │V § §
│ │ R2§ V2 §R3
│ － │ § §
└─┬─┘ │ │
│ │ － │
│ │ │
└───────────●───────┘
Fig. 1
2.(30%) Find the Q-point for the diodes in the curcuit in Fig.2.
(a) Using the ideal diode model
(b) Using the constant voltage drop model with V_on = 0.6V
(c) Explain the difference in (a) and (b).
○
│0V
│
─┴─
╲ ╱
─┬─
-5V │ 4.7KΩ 4.7KΩ │╱│ +12V
○──﹌﹌﹌──●─﹌﹌﹌─●─﹌﹌﹌─┤ ├──○
4.7KΩ │ │╲│
─┴─
╱ ╲
─┬─
│
+5V│
○
Fig.2
3.(25%) A silicon wafer is uniformly doped with 5 * 10^16 phosphorus
atoms/cm^3 and 6 * 10^16 boron atoms/cm^3. Find the eletron and hole
concentrations, the electron and hole mobilities, and the resistivity
of this silicon material at 300K. Is this material n- or p-type?
1270
μ_n = 92 + ───────────
N_T
1 + (──────)^0.91
1.3 * 10^17
447
μ_p = 48 + ───────────
N_T
1 + (──────)^0.76
6.3 * 10^16
（Fig.3 是一張與上二式對應的坐標平面圖，省略）
4.(25%) Fig.4 is a single loop circuit containing a 20-V source supplying
current to a Zener diode with a reverse breakdown voltage of 5V. Find the
Q-point for the diode.
(a) Using load-line analysis
(b) Using the piecewise linear model
5KΩ I_Z
┌──────﹌﹌﹌────→────┐
│ │
│ ╭────────╮ │
┌─┴─┐ │ │－ │
│ ＋ │ │ │ ┌┴┘
│ │20V │ │V_D ╱ ╲ V_Z = 5V
│ － │ │ │ ─┬─ R_Z = 100Ω
└─┬─┘ │ I_D │＋ │
│ ╰────→───╯ ↑I_D
│ │
└──────────────────┘
Fig.4 Curcuit containing a Zener diode with V_Z = 5V and R_Z = 100Ω
--
※ 發信站: 批踢踢實業坊(ptt.cc)
◆ From: 59.117.123.201
※ 編輯: paul112004 來自: 59.117.123.201 (04/25 21:12)
※ 編輯: paul112004 來自: 59.117.123.201 (04/25 21:13)
→
04/25 21:27, , 1F
04/25 21:27, 1F