[理工] 電子學小問題
For a 0.8μm CMOS fabrication process V = 0.8V V =-0.9V
tn tp
2 2 2
μ C = 90μA/V μ C = 30μA/V C =1.9fF/μm φ=0.34V
n ox p ox ox f
1/2
γ=0.5V V (n-channel devices)=8L(μm) and|V |(p-cha.)=12L(μm)
A A
Find the small-signal model parameters(g r g ) for both an NMOS
m o mb
and a PMOS transistor having W/L = 20μm/2 and operating at I =100μA
D
with |V |=1V
SB
主要問題是 ...V 應該要怎麼修正才是真正的V 題目給的為L(μm) !
A
知道的麻煩解惑一下 感恩 =____="
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※ 編輯: mp8113f 來自: 125.224.64.173 (02/07 18:00)
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