[問題] 半導體期中考必考題求問
A 1 um-thick photoresist mask is used to pattern a 5 um-wide line onto
a 4 um-thick polysilicon film to be etched anidotropically in a Cl-based
plasma.Assume an etch selectivity of 10 for polysilicon over the
photoresist and that the etch on polysilicon is perfectly anisotropic,i.e.,
etching occurs only in the vertical direction,while the photoresist is
attacked with perfect isotropy. Also,assume that the initial sidewall profile
of the photoresist is perfectly vertical.Draw the cross-section across the
5 um-wide line,showing the etch profiles of the photoresist of the photoresist
and the polysilicon film after a 3 um-deep etch of the polysilicon film is
completed.Indicate the dimensions and angles of the resulting profiles.
如題 很長的一條題目 有大大知道概念跟解法嗎
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